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FSDM0465RB
Features
Green Mode Fairchild Power Switch (FPSTM)
* Internal Avalanche Rugged SenseFET * Advanced Burst-Mode Operation Consumes Under One W at 240VAC & 0.5W Load * Precision Fixed Operating Frequency (66kHz) * Internal Start-up Circuit * Improved Pulse by Pulse Current Limiting * Over Voltage Protection (OVP) : Auto-Restart * Over Load Protection (OLP): Auto-Restart * Internal Thermal Shutdown (TSD) : Auto-Restart * Under Voltage Lock Out (UVLO) with Hysteresis * Low Operating Current (2.5mA) * Built-in Soft Start OUTPUT POWER TABLE (4)
230VAC 15%(3) PRODUCT FSDM0465RB FSDM0565RB FSDM07652RB FSDM12652RB Adapter(1) 48W 60W 70W 90W Open Frame(2) 56W 70W 80W 110W 85-265VAC Adapter(1) 40W 50W 60W 80W Open Frame(2) 48W 60W 70W 90W
Table 1. Maximum Output Power
Notes: 1. Typical continuous power in a non-ventilated enclosed adapter measured at 50C ambient. 2. Maximum practical continuous power in an open frame design at 50C ambient. 3. 230 VAC or 100/115 VAC with doubler. 4. The junction temperature can limit the maximum output power.
Application
* SMPS for LCD monitor and STB * Adapter
Related Application Notes
* AN4137 - Design Guidelines for Off-line Flyback Converters Using Fairchild Power Switch (FPS) * AN4140 - Transformer Design Consideration for Off-line Flyback Converters Using Fairchild Power Switch * AN4141 - Troubleshooting and Design Tips for Fairchild Power Switch Flyback Applications * AN4148 - Audible Noise Reduction Techniques for FPS Applications
Typical Circuit
Description
The FSDM0465RB is an integrated Pulse Width Modulator (PWM) and SenseFET specifically designed for high performance offline Switch Mode Power Supplies (SMPS) with minimal external components. This device is an integrated high voltage power switching regulator which combines a rugged avalanche, SenseFET with a current mode PWM control block. The PWM controller includes integrated fixed frequency oscillator, under voltage lockout, leading edge blanking (LEB), optimized gate driver, internal soft start, temperature compensated precise current sources for a loop compensation and self protection circuitry. Compared with a discrete MOSFET and PWM controller solution, the PWM/ FSDMRB can reduce total cost, component count, size and weigh, while simultaneously increasing efficiency, productivity, and system reliability. This device provides a basic platform well suited for cost-effective designs of flyback converters.
AC IN
DC OUT
Vstr PWM Vfb
Drain
Vcc
Source
Figure 1. Typical Flyback Application
FPSTM is a trademark of Fairchild Semiconductor Corporation
Rev.1.0.0
(c)2005 Fairchild Semiconductor Corporation
FSDM0465RB
Internal Block Diagram
Vcc 3 N.C 5 0.5/0.7V
+
Vstr 6
Drain 1
ICH
Vref 8V/12V Vcc good Internal Bias
Vcc Idelay Vref
OSC IFB
2.5R
PWM
S Q
VFB 4
R Q
Soft start
R
Gate driver LEB
VSD Vcc
S Q
2 GND
Vovp TSD Vcc good Vcc Good
R Q
VCL
Figure 2. Functional Block Diagram of FSDM0465RB
2
FSDM0465RB
Pin Description
Pin Number 1 2 3 Pin Name Drain GND Vcc Pin Function Description This pin is the high voltage power SenseFET drain. It is designed to drive the transformer directly. This pin is the control ground and the SenseFET source. This pin is the positive supply voltage input. During start up, the power is supplied by an internal high voltage current source that is connected to the Vstr pin. When Vcc reaches 12V, the internal high voltage current source is disabled and the power is supplied from the auxiliary transformer winding. This pin is internally connected to the inverting input of the PWM comparator. The collector of an opto-coupler is typically tied to this pin. For stable operation, a capacitor should be placed between this pin and GND. If the voltage of this pin reaches 6.0V, the over load protection is activated resulting in shutdown of the FPSTM. This pin is connected directly to the high voltage DC link. At startup, the internal high voltage current source supplies internal bias and charges the external capacitor that is connected to the Vcc pin. Once Vcc reaches 12V, the internal current source is disabled.
4
Vfb
5 6
N.C Vstr
Pin Assignments
TO-220F-6L
6.Vstr 5.N.C. 4.Vfb 3.Vcc 2.GND 1.Drain
Figure 3. Pin Configuration (Top View)
3
FSDM0465RB
Absolute Maximum Ratings
(Ta=25C, unless otherwise specified) Parameter Drain-source Voltage Vstr Max Voltage Pulsed Drain Current (Tc=25C)
(1)
Symbol VDSS VSTR IDM ID ID
*
Value 650 650 9.6 2.2 1.4 4 20 -0.3 to VCC 33 Internally limited -25 to +85 -55 to +150 2.0 (GND-Vstr/Vfb=1.5kV) 300 (GND-Vstr/Vfb=225V)
Unit V V A A (rms) A (rms) A (rms) mJ V V W C C C kV V
Continuous Drain Current (Tc=25C) (2) Continuous Drain Current (Tc=100C) (2) Continuous Drain Current (TDL=25C) Single Pulsed Avalanche Supply Voltage Input Voltage Range Total Power Dissipation (Tc=25C) Operating Junction Temperature Operating Ambient Temperature Storage Temperature Range ESD Capability, HBM Model (All pins except Vstr and Vfb) ESD Capability, Machine Model (All pins except Vstr and Vfb)
(2) * (3)
Energy (4)
EAS VCC VFB PD Tj TA TSTG
-
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Tc: Case Back Surface Temperature (With infinite heat sink) 3. TDL: Drain Lead Temperature (With infinite heat sink) 4. L=14mH, starting Tj=25C2. L=14mH, starting Tj=25C
Thermal Impedance
Parameter Junction-to-Ambient Thermal Junction-to-Case Thermal
Notes: 1. Infinite cooling condition - refer to the SEMI G30-88.
Symbol
Value 3.78
Unit C/W C/W
JA JC(1)
4
FSDM0465RB
Electrical Characteristics
(Ta = 25C unless otherwise specified) Parameter SenseFET SECTION Drain Source Breakdown Voltage BVDSS VGS = 0V, ID = 250A VDS = 650V, VGS = 0V Zero Gate Voltage Drain Current Static Drain Source On Resistance (1) Output Capacitance Turn On Delay Time Rise Time Turn Off Delay Time Fall Time CONTROL SECTION Initial Frequency Voltage Stability Temperature Stability (2) Maximum Duty Cycle Minimum Duty Cycle Start Threshold Voltage Stop Threshold Voltage Feedback Source Current Soft-start Time Leading Edge Blanking Time BURST MODE SECTION Burst Mode Voltages VBURH VBURL Vcc=14V Vcc=14V 0.7 0.5 V V FOSC FSTABLE FOSC DMAX DMIN VSTART VSTOP IFB TS TLEB VFB=GND VFB=GND VFB=GND Vfb=3 VFB = 3V 13V Vcc 18V -25C Ta 85C 60 0 0 77 11 7 0.7 66 1 5 82 12 8 0.9 10 250 72 3 10 87 0 13 9 1.1 15 kHz % % % % V V mA ms ns IDSS VDS= 520V VGS = 0V, TC = 125C VGS = 10V, ID = 2.5A VGS = 0V, VDS = 25V, f = 1MHz VDD= 325V, ID= 3.2A 650 2.2 60 23 20 65 27 250 250 2.6 ns V A A
Symbol
Condition
Min.
Typ.
Max.
Unit
RDS(ON) COSS TD(ON) TR TD(OFF) TF
pF
5
FSDM0465RB
Electrical Characteristics (Continued)
(Ta = 25C unless otherwise specified) Parameter PROTECTION SECTION Peak Current Limit (3) Over Voltage Protection Thermal Shutdown Temperature (2) Shutdown Feedback Voltage Shutdown Delay Current TOTAL DEVICE SECTION Startup Current (4) Istart IOP Operating Supply Current (4) IOP(MIN) IOP(MAX) VFB=GND, VCC=11V VFB=GND, VCC=14V VFB=GND, VCC=10V VFB=GND, VCC=18V 2.5 5 mA 1 1.3 mA IOVER VOVP TSD VSD IDELAY VFB=5V, VCC=14V 1.6 18 130 5.5 2.8 1.8 19 145 6.0 3.5 2.0 20 160 6.5 4.2 A V C V A Symbol Condition Min. Typ. Max. Unit
VFB 5.5V VFB=5V
Notes: 1. Pulse test: Pulse width 300S, duty 2% 2. These parameters, although guaranteed at the design, are not tested in mass production. 3. These parameters indicate the inductor current. 4. This parameter is the current flowing into the control IC.
6
FSDM0465RB
Typical Performance Characteristics
(These Characteristic Graphs are Normalized at Ta= 25C)
1.2 1.0
1. 2 1. 0 Start Threshold Voltage (Vstart) 0. 8 0. 6 0. 4 0. 2 0. 0
-25 0 25 50 75 100 125 150
Operating Current (Iop)
0.8 0.6 0.4 0.2 0.0 Ju nc tion Te mpe ratu re ()
-25
0
25
50
75
100 125 150
Junction Temperature()
Operating Current vs. Temp
1.2 1.0 Stop Threshold Voltage (Vstop)
Operating Frequency (Fosc)
Start Threshold Voltage vs. Temp
1.2 1.0 0.8 0.6 0.4 0.2 0.0
0.8 0.6 0.4 0.2 0.0 -25 0 25 50 75 100 125 150 Ju nc tion Te mpe ratu re ()
-25
0
25
50
75
100 125
150
Ju nc tion Te mpe ratu re ()
Stop Threshold Voltage vs. Temp
Operating Frequency vs. Temp
1.2 1.0 Maximum Duty Cycle (Dmax) 0.8 0.6 0.4 0.2 0.0 -25 0 25 50 75 100 125 150 Ju nc tion Te mpe ratu re ()
1. 2 1. 0 FB Source Current (Ifb) 0. 8 0. 6 0. 4 0. 2 0. 0 -25 0 25 50 75 100 125 150 Ju nc tion Tempe rature ()
Maximum Duty vs. Temp
Feedback Source Current vs. Temp
7
FSDM0465RB
Typical Performance Characteristics (Continued)
(These Characteristic Graphs are Normalized at Ta= 25C)
1.2 1.0 0.8 0.6 0.4 0.2 0.0 -25 0 25 50 75 100 125 150 Ju nc tion Te mpe ratu re ()
1.2 1.0 Shutdown Delay Current (Idelay) 0.8 0.6 0.4 0.2 0.0 -25 0 25 50 75 100 125 150 Ju n c tion T e mpe ra tu re ( )
Shutdown FB Voltage (Vsd)
Shutdown Feedback Voltage vs. Temp
Shutdown Delay Current vs. Temp
1.2 Over Voltage Protection (Vovp) 1.0 0.8 0.6 0.4 0.2 0.0 -25 0 25 50 75 100 125 150 Junction Temperature()
FB Burst Mode Enable Voltage (Vfbe)
1.2 1.0 0.8 0.6 0.4 0.2 0.0 -25 0 25 50 75 100 125 150 Junction Temperature()
Over Voltage Protection vs. Temp
Burst Mode Enable Voltage vs. Temp
1.2 Peak Current Limit(Self protection) (Iover) 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 Ju nc tion Te mpe ratu re ()
FB Burst Mode Disable Voltage (Vfbd)
1.2 1.0 0.8 0.6 0.4 0.2 0.0 -25 0 25 50 75 100 125 150 Junction Temperature()
Burst Mode Disable Voltage vs. Temp
Current Limit vs. Temp
8
FSDM0465RB
Typical Performance Characteristics (Continued)
(These Characteristic Graphs are Normalized at Ta= 25C)
1.2 1.0 Soft Start Time (Normalized to 25) 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 Junction Temperature()
Soft Start Time vs. Temp
9
FSDM0465RB
Functional Description
1. Startup: In previous generations of Fairchild Power Switches (FPSTM) the Vcc pin had an external start-up resistor to the DC input voltage line. In this generation the startup resistor is replaced by an internal high voltage current source. At startup, an internal high voltage current source supplies the internal bias and charges the external capacitor (Ca) that is connected to the Vcc pin as illustrated in Figure 4. When Vcc reaches 12V, the FSDM0465RB begins switching and the internal high voltage current source is disabled. Then, the FSDM0465RB continues its normal switching operation and the power is supplied from the auxiliary transformer winding unless Vcc goes below the stop voltage of 8V.
2.1 Pulse-by-Pulse Current Limit: Because current mode control is employed, the peak current through the SenseFET is limited by the inverting input of the PWM comparator (Vfb*) as shown in Figure 5. Assuming that the 0.9mA current source flows only through the internal resistor (2.5R +R= 2.8 k), the cathode voltage of diode D2 is about 2.5V. Since D1 is blocked when the feedback voltage (Vfb) exceeds 2.5V, the maximum voltage of the cathode of D2 is clamped at this voltage, thus clamping Vfb*. Therefore, the peak value of the current through the SenseFET is limited. 2.2 Leading Edge Blanking (LEB): At the instant the internal SenseFET is turned on, there usually exists a high current spike through the SenseFET, caused by primary-side capacitance and secondary-side rectifier reverse recovery. Excessive voltage across the Rsense resistor would lead to incorrect feedback operation in the current mode PWM control. To counter this effect, the FSDM0465RB employs an LEB circuit. This circuit inhibits the PWM comparator for a short time (TLEB) after the, SenseFET is turned on.
VDC Ca
Vcc Idelay
Vref IFB
OSC
Vcc 3 6
Vstr
Vo
Vfb
H11A817A
CB
4 D1 D2 2.5R + Vfb*
SenseFET
ICH
Vref 8V/12V Vcc good Vcc Good Internal Bias
VSD
KA431
R
Gate Gate driver Driver
-
OLP
Rsense
Figure 5. Pulse Width Modulation (PWM) Circuit Figure 4. Internal Startup Circuit
2. Feedback Control: FSDM0465RB employs current mode control, as shown in Figure 5. An opto-coupler (such as the H11A817A) and shunt regulator (such as the KA431) are typically used to implement the feedback network. Comparing the feedback voltage with the voltage across the Rsense resistor plus an offset voltage makes it possible to control the switching duty cycle. When the reference pin voltage of the KA431 exceeds the internal reference voltage of 2.5V, the H11A817A LED current increases, thus decreasing the feedback voltage and reducing the duty cycle. This event typically happens when the input voltage is increased or the output load is decreased.
3. Protection Circuit: The FSDM0465RB has several self protective functions such as over load protection (OLP), over voltage protection (OVP), and thermal shutdown (TSD). Because these protection circuits are fully integrated into the IC without external components, the reliability can be improved without increasing cost. Once the fault condition occurs, switching is terminated and the SenseFET remains off. This causes Vcc to fall. When Vcc reaches the UVLO stop voltage, 8V, the protection is reset and the internal high voltage current source charges the Vcc capacitor via the Vstr pin. When Vcc reaches the UVLO start voltage,12V, the FSDM0465RB resumes its normal operation. In this manner, the auto-restart can alternately enable and disable the switching of the power Sense FET until the fault condition is eliminated (see Figure 6).
10
FSDM0465RB
Vds
Power On on
Fault Occurs occurs
Fault Removed removed
VFB
Over Load protection load Protection
6.0V
2.5V
Vcc
T 12= Cfb*(6.0-2.5)/Idelay
12V 8V
T1
T2
t
Figure 7. Over Load Protection
t
Normal Operation operation Fault Situation situation Normal Operation operation
Figure 6. Auto Restart Operation
3.1 Over Load Protection (OLP): Overload is defined as the load current exceeding a pre-set level due to an unexpected event. In this situation, the protection circuit should be activated to protect the SMPS. However, even when the SMPS is operation normally, the over load protection circuit can be activated during the load transition. To avoid this undesired operation, the over load protection circuit is designed to be activated after a specified time to determine whether it is a transient situation or an overload situation. Because of the pulse-by-pulse current limit capability, the maximum peak current through the SenseFET is limited, and therefore the maximum input power is restricted with a given input voltage. If the output consumes beyond this maximum power, the output voltage (Vo) decreases below the set voltage. This reduces the current through the opto-coupler LED, which also reduces the opto-coupler transistor current, thus increasing the feedback voltage (Vfb). If Vfb exceeds 2.5V, D1 is blocked and the 3.5uA current source starts to charge CB slowly up to Vcc. In this condition, Vfb continues increasing until it reaches 6V, when the switching operation is terminated as shown in Figure 7. The delay time for shutdown is the time required to charge CB from 2.5V to 6.0V with 3.5uA. In general, a 10 ~ 50 ms delay time is typical for most applications.
3.2 Over Voltage Protection (OVP): If the secondary side feedback circuit malfunction or a solder defect caused an open in the feedback path, the current through the optocoupler transistor becomes almost zero. Then, Vfb climbs up in a similar manner to the over load situation, forcing the preset maximum current to be supplied to the SMPS until the over load protection is activated. Because more energy than required is provided to the output, the output voltage may exceed the rated voltage before the over load protection is activated, resulting in the breakdown of the devices in the secondary side. To prevent this situation, an OVP circuit is employed. In general, Vcc is proportional to the output voltage and the FSDM0465RB uses Vcc instead of directly monitoring the output voltage. If VCC exceeds 19V, an OVP circuit is activated resulting in the termination of the switching operation. To avoid undesired activation of OVP during normal operation, Vcc should be designed to be below 19V. 3.3 Thermal Shutdown (TSD): The SenseFET and the control IC are built in one package. This makes it easy for the control IC to detect the heat generation from the Sense FET. When the temperature exceeds approximately 150C, the thermal shutdown is activated. 4. Soft Start: The FSDM0465RB's internal soft-start circuit slowly increases the PWM comparator's inverting input voltage along with the SenseFET current after it starts up. The typical soft-start time is 10msec, The pulse width to the power switching device is progressively increased to establish the correct working conditions for transformers, inductors, and capacitors. The voltage on the output capacitors is progressively increased with the intention of smoothly establishing the required output voltage. It also helps to prevent transformer saturation and reduce the stress on the secondary diode during startup.
11
FSDM0465RB
5. Burst Operation: To minimize power dissipation in standby mode, the FSDM0465RB enters burst mode operation. As the load decreases, the feedback voltage decreases. As shown in Figure 8, the device automatically enters burst mode when the feedback voltage drops below VBURL(500mV). At this point switching stops and the output voltages start to drop at a rate dependent on the standby current load. This causes the feedback voltage to rise. Once it passes VBURH(700mV), switching resumes. The feedback voltage then falls and the process repeats. Burst mode operation alternately enables and disables switching of the power SenseFET thereby reducing switching loss in Standby mode.
Vo
Voset
VFB
0.7V 0.5V
Ids
Vds
time
Switching Switching Switching Switching disabled disabled T1 Disabled T2 T3 Disabled T4
Figure 8. Waveforms of Burst Operation
12
FSDM0465RB
Typical application circuit
Application LCD Monitor Output Power 34W Input Voltage Universal Input (85-265Vac) Output Voltage (Max Current) 5V (2.0A) 12V (2.0A)
Features
* * * * * * High efficiency (>81% at 85Vac input) Low zero load power consumption (<300mW at 240Vac input) Low standby mode power consumption (<800mW at 240Vac input and 0.3W load) Low component count Enhanced system reliability through various protection functions Internal soft-start (10ms)
Key Design Notes
* Resistors R102 and R105 are employed to prevent start-up at low input voltage. After startup, there is no power loss in these resistors since the startup pin is internally disconnected after startup. * The delay time for over load protection is designed to be about 50ms with C106 of 47nF. If a faster triggering of OLP is required, C106 can be reduced to 10nF. * Zener diode ZD102 is used for a safety test such as UL. When the drain pin and feedback pin are shorted, the zener diode fails and remains short, which causes the fuse (F1) to blow and prevents explosion of the opto-coupler (IC301). This zener diode also increases the immunity against line surges. 1. Schematic
D202 T1 EER3016 MBRF10100 1 R103 56k 2W C104 2.2nF 1kV 10 C201 1000uF 25V 8
L201 12V, 2A C202 1000uF 25V
2 D101 UF 4007
C103 100uF 400V BD101 2 2KBP06M3N257 1 3
R102 30k
3
R105 40k 6 5
IC1 FSDM0465RB Vstr NC Drain 1 D201 MBRF1045 C105 D102 22uF TVR10G 50V R104 5 4 7 C203 1000uF 10V 5 6 L202 5V, 2A C204 1000uF 10V
4 C102 220nF 275VAC
4 ZD102 10V C106 47nF 50V
Vcc 3 Vfb GND 2 ZD101 22V
LF101 23mH
C301 4.7nF
R201 1k R101 560k 1W R204 5.6k R203 12k C205 47nF
R202 1.2k IC301 H11A817A
RT1 5D-9
C101 220nF 275VAC
F1 FUSE 250V 2A
IC201 KA431
R205 5.6k
13
FSDM0465RB
2. Transformer Schematic Diagram
EER3016 Np/2 Np/2 1 10 9 8 N12V
2 3
4 Na 5
7N 5V 6
3.Winding Specification
No Na Np/2 N12V N5V Np/2
Pin (sf) 45 21 10 8 76 32
Wire 0.2 x1
Turns 8 18 7 3 18
Winding Method Center Winding Solenoid Winding Center Winding Center Winding Solenoid Winding
Insulation: Polyester Tape t = 0.050mm, 2Layers 0.4 x 1 0.3 x 3 0.3 x 3 0.4 x 1 Insulation: Polyester Tape t = 0.050mm, 2Layers Insulation: Polyester Tape t = 0.050mm, 2Layers Insulation: Polyester Tape t = 0.050mm, 2Layers Outer Insulation: Polyester Tape t = 0.050mm, 2Layers
4.Electrical Characteristics
Pin Inductance Leakage Inductance 1-3 1-3
Specification 650uH 10% 10uH Max
Remarks 100kHz, 1V 2nd All Short
5. Core & Bobbin Core: EER 3016 Bobbin: EER3016 Ae(mm2): 96
14
FSDM0465RB
6.Demo Circuit Part List
Part F101 RT101 R101 R102 R103 R104 R105 R201 R202 R203 R204 R205 Value Fuse 2A/250V NTC 5D-9 Resistor 560K 30K 56K 5 40K 1K 1.2K 12K 5.6K 5.6K 1W 1/4W 2W 1/4W 1/4W 1/4W 1/4W 1/4W 1/4W 1/4W D101 D102 D201 D202 ZD101 ZD102 BD101 Capacitor C101 C102 C103 C104 C105 C106 C201 C202 C203 C204 C205 220nF/275VAC 220nF/275VAC 100uF/400V 2.2nF/1kV 22uF/50V 47nF/50V 1000uF/25V 1000uF/25V 1000uF/10V 1000uF/10V 47nF/50V Box Capacitor Box Capacitor Electrolytic Capacitor Ceramic Capacitor Electrolytic Capacitor Ceramic Capacitor Electrolytic Capacitor Electrolytic Capacitor Electrolytic Capacitor Electrolytic Capacitor Ceramic Capacitor IC101 IC201 IC301 FSDM0465RB KA431(TL431) H11A817A LF101 23mH IC FPSTM(4A,650V) Voltage Reference Opto-Coupler Line Filter Wire 0.4mm UF4007 TVR10G MBRF1045 MBRF10100 Zener Diode Zener Diode Bridge Diode 2KBP06M 3N257 Bridge Diode 22V 10V Diode L201 L202 5uH 5uH Inductor Wire 1.2mm Wire 1.2mm Note Part C301 Value 4.7nF Note Polyester Film Cap.
15
FSDM0465RB
7. Layout
Figure 9. PCB Top Layout Considerations for FSDM0465RB
Figure 10. PCB Bottom Layout Considerations for FSDM0465RB
16
FSDM0465RB
Package Dimensions
TO-220F-6L(Forming)
17
FSDM0465RB
Ordering Information
Product Number FSDM0465RBWDTU
WDTU: Forming Type
Package TO-220F-6L(Forming)
Marking Code DM0465R
BVdss 650V
Rds(on) Max. 2.6
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
www.fairchildsemi.com 10/14/05 0.0m 001 2005 Fairchild Semiconductor Corporation
2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

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